PART |
Description |
Maker |
GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM 8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 32KX82,3.3 O的流水线,双氰胺SyncBurst的SRAM兆,3.3V的输输出,流水线式,双循环取消选择,同步脉冲静态存储器
|
Micron Technology, Inc. Micrel Semiconductor, Inc.
|
DS2045L |
3.3V Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
DS2045Y DS2045AB |
Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
GS71116TJ GS71116TP GS71116TU |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM
|
GSI Technology
|
N01L1618N1AT2-70I N01L1618N1A N01L1618N1AB N01L161 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N01L163WN1AT2-55I N01L163WN1A N01L163WN1AB2-55I N0 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N01L83W2AT5I N01L83W2AT5IT N01L83W2AN25I N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 8 bit 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit
|
ON Semiconductor
|
N01L63W3A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL3 |
25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM,贴962-89598 128Kx8 Monolithic SRAM/ SMD 5962-89598 15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs ETC Electronic Theatre Controls, Inc.
|